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High-Purity Silicon Wafer for Research

High-Purity Silicon Wafer for Research

Standard Unit Price:
MYR 407.16-
Days to Ship :
8 Day(s)

It has been proven as a tool for research and development and supports various shapes and surface treatments, such as countersinking and drilling.

Basic Specifications

  • Product Type
    Material
  • Material
    Other
  • Manufacturer Product Name
    High-Purity Silicon Wafer for Research
  • Specifications
    Manufacturing method: CZ method; Surface direction: 100
  • Footnotes
    * The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)
  • Particle
    Any particles
  • Resistance Value
    0.1~100Ω・cm
  • OF Position
    110
Part Number
Size(mm)

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  • 2 (Inch) x N Type
  • 2 (Inch) x P Type
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Manufacturer Model

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  • 2XN Type
  • 2XP Type
  • 3XN Type
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  • 4XP Type
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Quantity
2 (Inch) x P Type
2XP Type
8 Day(s)
MYR 419.23

Part Number : 2-960-01
Days to Ship 8 Day(s)
Standard Unit Price MYR 419.23

Specificationtitle

  • Product Type
    Material
  • Material
    Other
  • Size(mm)
    2 (Inch) x P Type
  • Manufacturer Product Name
    High-Purity Silicon Wafer for Research
  • Manufacturer Model
    2XP Type
  • Specifications
    Manufacturing method: CZ method; Surface direction: 100
  • Footnotes
    * The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)
  • Particle
    Any particles
  • OF Length (mm) X Wafer Thickness
    17.5±2.5X280±25
  • Resistance Value
    0.1~100Ω・cm
  • OF Position
    110
2 (Inch) x N Type
2XN Type
8 Day(s)
MYR 419.23

Part Number : 2-960-02
Days to Ship 8 Day(s)
Standard Unit Price MYR 419.23

Specificationtitle

  • Product Type
    Material
  • Material
    Other
  • Size(mm)
    2 (Inch) x N Type
  • Manufacturer Product Name
    High-Purity Silicon Wafer for Research
  • Manufacturer Model
    2XN Type
  • Specifications
    Manufacturing method: CZ method; Surface direction: 100
  • Footnotes
    * The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)
  • Particle
    Any particles
  • OF Length (mm) X Wafer Thickness
    17.5±2.5X280±25
  • Resistance Value
    0.1~100Ω・cm
  • OF Position
    110
3 (Inch) x N Type
3XN Type
8 Day(s)
MYR 409.27

Part Number : 2-960-04
Days to Ship 8 Day(s)
Standard Unit Price MYR 409.27

Specificationtitle

  • Product Type
    Material
  • Material
    Other
  • Size(mm)
    3 (Inch) x N Type
  • Manufacturer Product Name
    High-Purity Silicon Wafer for Research
  • Manufacturer Model
    3XN Type
  • Specifications
    Manufacturing method: CZ method; Surface direction: 100
  • Footnotes
    * The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)
  • Particle
    Any particles
  • OF Length (mm) X Wafer Thickness
    22.5±2.5X380±25
  • Resistance Value
    0.1~100Ω・cm
  • OF Position
    110
4 (Inches) x P type
4XP Type
8 Day(s)
MYR 407.16

Part Number : 2-960-05
Days to Ship 8 Day(s)
Standard Unit Price MYR 407.16

Specificationtitle

  • Product Type
    Material
  • Material
    Other
  • Size(mm)
    4 (Inches) x P type
  • Manufacturer Product Name
    High-Purity Silicon Wafer for Research
  • Manufacturer Model
    4XP Type
  • Specifications
    Manufacturing method: CZ method; Surface direction: 100
  • Footnotes
    * The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)
  • Particle
    Any particles
  • OF Length (mm) X Wafer Thickness
    32.5±2.5X525±25
  • Resistance Value
    0.1~100Ω・cm
  • OF Position
    110
4 (Inches) x N type
4XN Type
8 Day(s)
MYR 408.16

Part Number : 2-960-06
Days to Ship 8 Day(s)
Standard Unit Price MYR 408.16

Specificationtitle

  • Product Type
    Material
  • Material
    Other
  • Size(mm)
    4 (Inches) x N type
  • Manufacturer Product Name
    High-Purity Silicon Wafer for Research
  • Manufacturer Model
    4XN Type
  • Specifications
    Manufacturing method: CZ method; Surface direction: 100
  • Footnotes
    * The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)
  • Particle
    Any particles
  • OF Length (mm) X Wafer Thickness
    32.5±2.5X525±25
  • Resistance Value
    0.1~100Ω・cm
  • OF Position
    110

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